| S olution | T reatment Temperature( ºC ) | T reatment Time(H) | T est Results |
| H 2 0 | 9 5 | 4 5 | 0 .0001-0.0002 |
| 1 /100 NHNO 3 | 1 15 | 2 0 | 0 .005-0.01 |
| 5 % NaOH | 1 00 | 1 0 | 1 .35 |
| I tem | G rade |
| B ubbles | 0 -0.03mm 2 /100cm 3 |
| S triae | G rade A in one direction(As per Mil-G-174) |
| B irefrengence(Strain) | 1 0nm/cm and under |
| F luorescence | N ot permitted(Excited wavelength 254nm) |
| I tem | U nit | V alue |
| D ensity | g /cm 3 | 2 .201 |
| Y ong's Module | Kg/mm 2 | 7 280 |
| P oisson's ratio | 0 .17 | |
| C ompression strength | Kg/mm 2 | 1 15 |
| Bending strength | Kg/mm 2 | 7 .0 |
| T ensile strength | Kg/mm 2 | 5 .6 |
| Torsional rigidity | Kg/mm 2 | 3 150 |
| V ickers hardness | Kg/mm 2 | 9 00-1030 |
| K noop hardness | Kg/mm 2 | 6 50-710 |
| C oefficient of thermal expansion | cm/cm ºC | 5 .5*10 -7 |
| S oftening point | ºC | 1 700 |
| A nnealing point | ºC | 1 160 |
| S train point | ºC | 1 060 |
| S pecific heat(26 ºC ) | Cal/g. ºC | 0 .176 |
| T hermal conductivity ratio(26 ºC ) | cal/cm.sec. ºC | 2 .65*10 -3 |
| T hermal conductivity ratio(100 ºC ) | Cal/cm.sec. ºC | 3 .27*10 -3 |
| A pplying Fields: |
This product can be used in a wide variety of industrial applications for semiconductors, optical and all physical or chemical related research featuring these applications:
1).Wafers for various types of devices such as TFT(poly-Si thin-film transistor LCD.),SOI(Silicon on Insulator) etc. 2).Photomask substrates for ultra-LSI and LCD. 3). Reactor furnace tubes, jigs and tools for ULSI manufacturing processes. 4). Electrical-discharge lamp tubes. 5).Optical elements, Lenses, mirrors and windows, for ultraviolet and vacuum ultraviolet. |
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